Inverse-T gate structure using damascene processing

Details Inverse-T gate structure using damascene processing Inverse-T gate structure using damascene processing

2006-04-11

2006-04-11

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S184000, C438S229000, C438S230000, C438S231000

Reexamination Certificate

active

07026202

ABSTRACT:
A field effect transistor has an inverse-T gate conductor having a thicker center portion and thinner wings. The wings may be of a different material different than the center portion. In addition, gate dielectric may be thicker along edges than in the center. Doping can also be different under the wings than along the center portion or beyond the gate. Regions under the wings may be doped differently than the gate conductor. With a substantially vertical implant, a region of the channel overlapped by an edge of the gate is implanted without implanting a center portion of the channel, and this region is blocked from receiving at least a portion of the received by thick portions of the gate electrode.

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