Inverse T-gate FET transistor with lightly doped source and drai

Details Inverse T-gate FET transistor with lightly doped source and drai Inverse T-gate FET transistor with lightly doped source and drai

1992-01-22

1993-08-31

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257408, 257412, 257754, H01L 2976, H01L 2994, H01L 31062, H01L 2348

Patent

active

052412032

ABSTRACT:
A lightly doped drain, field effect transistor with an inverted "T"-gate structure has a gate electrode disposed on a polysilicon pad in a stack opening. The inner edge of a lightly-doped source and drain region is aligned with the gate electrode and its outer edge is aligned with an edge of the polysilicon pad. The inner edge of a heavily-doped source and drain region is aligned with the edge of the edge of the polysilicon pad and its outer edge is aligned with the wall surface that forms the opening. The inner edge of a source and drain contact region is aligned with the wall and extends under the stack.

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