Interposer including air gap structure, methods of forming...

Details Interposer including air gap structure, methods of forming... Interposer including air gap structure, methods of forming...

2006-07-13

2011-12-27

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257SE23168

Reexamination Certificate

active

08084840

ABSTRACT:
Example embodiments of the present invention relate to an interposer of a semiconductor device having an air gap structure, a semiconductor device using the interposer, a multi-chip package using the interposer and methods of forming the interposer. The interposer includes a semiconductor substrate including a void, a metal interconnect, provided within the void, thereby forming an air gap insulating the metal interconnect. The metal interconnect may be connected to a contact element, and may be maintained within the air gap using the contact element.

REFERENCES:
patent: 5825092 (1998-10-01), Delgado et al.
patent: 6087701 (2000-07-01), Bergstrom et al.
patent: 6492705 (2002-12-01), Begley et al.
patent: 0 614 221 (1994-09-01), None
patent: 04-158553 (1992-06-01), None
patent: 10-092932 (1998-04-01), None
patent: A-2000-277659 (2000-10-01), None
patent: 2001-326275 (2001-11-01), None
patent: 2003-133057 (2003-05-01), None
patent: 2004-056093 (2004-02-01), None
patent: 2004-158524 (2004-06-01), None
patent: 2005-175435 (2005-06-01), None
Office Action dated Oct. 18, 2010 for corresponding German Patent Application No. 10 2006 033 039.0-33.

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