Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-07-08
2010-02-23
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S786000
Reexamination Certificate
active
07667331
ABSTRACT:
An interposer chip in accordance includes an insulating layer, conductive patterns and a dummy pattern. The conductive patterns are formed on the insulating layer. The dummy pattern is formed on the insulating layer to suppress a bending of the insulating layer. Further, the dummy pattern can have first isolating grooves formed along peripherals of the conductive patterns to isolate the dummy pattern from the conductive patterns. Thus, the interposer chip is not vulnerable to being bent. Further, an electrical short between the conductive patterns through the dummy pattern caused by particles is substantially avoided.
REFERENCES:
patent: 6342715 (2002-01-01), Shimizu et al.
patent: 2001/0040242 (2001-11-01), Koike
patent: 2007/0075437 (2007-04-01), Nishimura et al.
patent: 2007/0120246 (2007-05-01), Lim
patent: 2007/0170544 (2007-07-01), Koike
patent: 2008/0042300 (2008-02-01), Nishimura et al.
patent: 2004-047715 (2004-02-01), None
patent: 2007-103411 (2007-04-01), None
patent: 10-0648040 (2006-11-01), None
Ban Hyo-Dong
Lim Jong-Seok
Clark S. V
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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