Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-09-29
1997-04-08
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, 257314, 257324, H01L 29788
Patent
active
056190522
ABSTRACT:
A dielectric insulating composite for insulating a floating gate from a control gate in a nonvolatile memory cell such as EPROM, EEPROM and flash EPROM cells is provided which includes a bottom layer of silicon dioxide formed on the floating gate, a layer of silicon nitride formed on the bottom silicon dioxide layer and a top silicon dioxide layer formed on the nitride layer where the silicon nitride layer has a thickness in the resulting composite which is less than the bottom and top silicon dioxide layers. In one embodiment, the nonvolatile memory cell includes a first conductivity-type semiconductor substrate, source and drain regions formed on a surface of the substrate, an insulating layer thermally grown on top of the source and drain regions, a floating gate positioned on the insulating layer for insulating the floating gate from the source and drain regions, the dielectric insulating composite being positioned between the floating gate and a control gate.
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Chang Chang Y.
Huang Chin-Yi
Peng Nai C.
Shone Fuchia
Jackson Jerome
Macronix International Co. Ltd.
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