Internally shielded dynamic random access memory cell

Details Internally shielded dynamic random access memory cell Internally shielded dynamic random access memory cell

1994-06-13

1995-12-12

Nguyen, Viet Q.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365182, H01L 2170

Patent

active

054752477

ABSTRACT:
In the manufacturing process of a Dynamic Random Access Memory cell, the conducting layer used for preventing the capacitive coupling between a bit line and a word line is formed over the surface of the entire memory cell excepting the contact region of a bit line and a storage electrode. Moreover, as the conducting layer used for preventing the capacitive coupling is used as an etching barrier in the etching process forming a contact hole, self-aligned contacts are formed. Therefore, the operation of the unwanted cell of a Dynamic Random Access Memory cell caused by the capacitive coupling is protected and a highly integrated Dynamic Random Access Memory cell is manufactured.

REFERENCES:
patent: 5084406 (1992-01-01), Rhodes et al.
patent: 5100826 (1992-03-01), Dennison
patent: 5114873 (1992-05-01), Kim et al.
patent: 5140389 (1992-08-01), Kimura et al.
patent: 5151878 (1992-09-01), Yamada et al.
patent: 5292677 (1994-03-01), Dennison
patent: 5352621 (1994-10-01), Kim et al.

Affiliated with

Also associated with

Rating

Internally shielded dynamic random access memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Internally shielded dynamic random access memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Internally shielded dynamic random access memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1361874