Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-10-23
2007-10-23
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C327S541000
Reexamination Certificate
active
11464183
ABSTRACT:
Disclosed herein is an internal voltage supply circuit for a semiconductor device. The internal voltage supply circuit includes a first voltage driver for supplying a first voltage in response to a first enable signal, a second voltage driver for supplying a second voltage in response to a second enable signal, and a first enable signal generator for generating the first enable signal having an enable period of a desired time according to a current drive capability of the semiconductor device. The enable period is set to be shorter than a predetermined reference period when the current drive capability of the semiconductor device is higher than a predetermined reference current drive capability, and the enable period is set to be longer than the reference period when the current drive capability of the semiconductor device is lower than the reference current drive capability.
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Hynix / Semiconductor Inc.
Marshall Gerstein & Borun LLP.
Tran Michael T
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