Internal voltage generator of semiconductor device

Details Internal voltage generator of semiconductor device Internal voltage generator of semiconductor device

2007-03-14

2009-02-17

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S189070

Reexamination Certificate

active

07492646

ABSTRACT:
An internal voltage generator of a semiconductor memory device is capable of changing driving abilities between standby and active modes, to respond faster in the active mode and prevent a leakage current in the standby mode. The internal voltage generator of a semiconductor memory device comprises a driving controller for generating drive control signals having information about standby and active modes, a first voltage generator enabled by the drive control signals for comparing an internal voltage with a reference voltage in the standby and active modes, a first driver for generating the internal voltage according to a comparison performed by the first voltage generator, a second voltage generator enabled by the drive control signal for comparing the internal voltage with the reference voltage in the active mode, and a second driver for generating the internal voltage according to a comparison performed by the second voltage generator.

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Korean Office Action, with English translation, issued in Korean Patent Application No. KR 10-2006-0060051, mailed Aug. 28, 2007.

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