Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-09-27
2009-02-17
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S148000, C365S210120
Reexamination Certificate
active
07492645
ABSTRACT:
An internal voltage generator for a semiconductor memory device is provided. The internal voltage generator includes a first reference voltage generator for generating a first reference voltage, a second reference voltage generator for generating a second reference voltage, a core voltage generator for raising a core voltage based on the first reference voltage, and a core voltage discharger for discharging the core voltage depending on the second reference voltage.
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Korean Office Action issued in corresponding Korean Patent Application No. KR 10-2006-0038700, dated Apr. 24, 2007.
Kang Khil-Ohk
Oh Young-Hoon
Hynix / Semiconductor Inc.
Le Thong Q
McDermott Will & Emery LLP
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