Internal voltage generator for semiconductor memory device

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S226000, C365S148000, C365S210120

Reexamination Certificate

active

07492645

ABSTRACT:
An internal voltage generator for a semiconductor memory device is provided. The internal voltage generator includes a first reference voltage generator for generating a first reference voltage, a second reference voltage generator for generating a second reference voltage, a core voltage generator for raising a core voltage based on the first reference voltage, and a core voltage discharger for discharging the core voltage depending on the second reference voltage.

REFERENCES:
patent: 4347058 (1982-08-01), Polito et al.
patent: 5736869 (1998-04-01), Wei
patent: 5841618 (1998-11-01), Dilkes et al.
patent: 5966337 (1999-10-01), Lee et al.
patent: 5986954 (1999-11-01), Pascucci
patent: 6043685 (2000-03-01), Lee
patent: 6097653 (2000-08-01), Park
patent: 6362697 (2002-03-01), Pulvirenti
patent: 2003/0071679 (2003-04-01), Kono et al.
patent: 2005/0073356 (2005-04-01), Won
patent: 10-340583 (1998-12-01), None
patent: 2003-0053923 (2003-07-01), None
patent: 10-2004-0051672 (2004-06-01), None
Korean Office Action issued in corresponding Korean Patent Application No. KR 10-2006-0038700, dated Apr. 24, 2007.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Internal voltage generator for semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Internal voltage generator for semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Internal voltage generator for semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4128149

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.