Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2008-01-01
2008-01-01
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189070, C327S054000
Reexamination Certificate
active
11167394
ABSTRACT:
Provided is an internal voltage generator for a semiconductor memory includes: a first internal voltage drive device for driving an internal voltage in response to a first reference voltage corresponding to a target level of an internal voltage; and a second internal voltage drive device for driving the internal voltage in response to a second reference voltage having a lower level than the first reference voltage.
REFERENCES:
patent: 4602205 (1986-07-01), Matsuhashi et al.
patent: 4769784 (1988-09-01), Doluca et al.
patent: 5969557 (1999-10-01), Tanzawa et al.
patent: 6529421 (2003-03-01), Marr et al.
patent: 6791395 (2004-09-01), Kim
patent: 2005/0062520 (2005-03-01), Kim et al.
patent: 2005/0073355 (2005-04-01), Sivero et al.
patent: 2005/0168263 (2005-08-01), Fukuda et al.
patent: 2002-0044200 (2002-06-01), None
Hynix / Semiconductor Inc.
McDermott Will & Emery LLP
Pham Ly Duy
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