Internal voltage generator for a semiconductor memory device

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

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C365S189070, C327S054000

Reexamination Certificate

active

07315478

ABSTRACT:
Provided is an internal voltage generator for a semiconductor memory includes: a first internal voltage drive device for driving an internal voltage in response to a first reference voltage corresponding to a target level of an internal voltage; and a second internal voltage drive device for driving the internal voltage in response to a second reference voltage having a lower level than the first reference voltage.

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patent: 2005/0073355 (2005-04-01), Sivero et al.
patent: 2005/0168263 (2005-08-01), Fukuda et al.
patent: 2002-0044200 (2002-06-01), None

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