Internal voltage generator for a non-volatile semiconductor memo

Details Internal voltage generator for a non-volatile semiconductor memo Internal voltage generator for a non-volatile semiconductor memo

1993-05-24

1994-12-06

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

36518907, 36518911, 365185, 365226, G11C 700

Patent

active

053717058

ABSTRACT:
The semiconductor device includes a voltage generator for generating selectively a signal of a first level or a second level onto a first supply line, and a voltage converter using voltage signals on the first supply line and a second supply line for producing a signal of the voltage level on the first or the second supply line in accordance with an input signal, and a voltage level shifter for detecting the level of the voltage on the first supply line to shift in voltage level a signal on the second power supply line toward the first level when the voltage on the first supply line approaches the first level. The difference of the voltages on the first and second supply lines can be reduced to improve the break-down characteristics of a transistor included in the voltage converter, resulting in a reliable semiconductor device.

REFERENCES:
patent: 4972375 (1990-11-01), Ueno et al.
T. Jinbo et al, "A 5V-Only 16Mb Flash Memory with Sector-Erase Mode", ISSCC 92 Slide Supplement, pp. 114-115.

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