Static information storage and retrieval – Powering
Patent
1997-12-26
1999-06-15
Dinh, Son T.
Static information storage and retrieval
Powering
365201, 365210, G11C 700
Patent
active
059128569
ABSTRACT:
An internal voltage generator circuit in a semiconductor memory device includes high voltage detecting means for receiving an external voltage, detecting whether the external voltage is at a high voltage in a burn-in mode, and generating a detection signal; and internal voltage generating means driven by a driving signal externally applied, for generating an internal voltage for a burn-in mode of a desired high voltage level higher than the external voltage or an internal voltage lower than the external voltage in response to the detection signal received from the high voltage detecting means.
REFERENCES:
patent: 5300824 (1994-04-01), Iyengar
patent: 5396113 (1995-03-01), Park et al.
patent: 5636171 (1997-06-01), Yoo et al.
patent: 5666313 (1997-09-01), Ichiguchi
patent: 5694364 (1997-12-01), Morishita et al.
Bae Huy-Cheol
Lee Ho-Jae
Lee Kyoung-shub
Dinh Son T.
Hyundai Electronics Industries Co,. Ltd.
LandOfFree
Internal voltage generating circuit in semiconductor memory devi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Internal voltage generating circuit in semiconductor memory devi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Internal voltage generating circuit in semiconductor memory devi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-407106