Internal voltage generating circuit in semiconductor memory devi

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365201, 365210, G11C 700

Patent

active

059128569

ABSTRACT:
An internal voltage generator circuit in a semiconductor memory device includes high voltage detecting means for receiving an external voltage, detecting whether the external voltage is at a high voltage in a burn-in mode, and generating a detection signal; and internal voltage generating means driven by a driving signal externally applied, for generating an internal voltage for a burn-in mode of a desired high voltage level higher than the external voltage or an internal voltage lower than the external voltage in response to the detection signal received from the high voltage detecting means.

REFERENCES:
patent: 5300824 (1994-04-01), Iyengar
patent: 5396113 (1995-03-01), Park et al.
patent: 5636171 (1997-06-01), Yoo et al.
patent: 5666313 (1997-09-01), Ichiguchi
patent: 5694364 (1997-12-01), Morishita et al.

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