Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2006-06-27
2006-06-27
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S203000, C365S204000
Reexamination Certificate
active
07068547
ABSTRACT:
An internal voltage generating circuit in a semiconductor memory device includes a comparing unit for comparing a voltage level of an internal voltage with that of a reference voltage, a pull-up driving unit for performing a pull-up operation for an output terminal in response to an output signal of the comparing unit, and a discharging unit for discharging the output terminal in a period of which the voltage level of the internal voltage is higher than a predetermined target voltage level.
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Hoang Huan
Hynix / Semiconductor Inc.
Town and Townsend and Crew LLP
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