Internal voltage boosting circuit in a semiconductor memory devi

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365203, 365204, G11C 700

Patent

active

055792766

ABSTRACT:
The voltage boosting circuit of the present invention includes a voltage converting circuit connected between an oscillator and a pair of pumping capacitors. The pair of pumping capacitors are then connected to a single transmission transistor, which outputs a boosted voltage that is derived from the combination of a precharge voltage placed on the source of the transmission transistor and the voltage stored on the pumping capacitors. The presence of the voltage converting circuit, which uses cross-connected PMOS transistors coupled to ground through a pair of NMOS transistors and establishes a differential amplifier, substantially eliminates the body effect problems that would otherwise occur.

REFERENCES:
patent: 5426333 (1995-06-01), Maeda
patent: 5511026 (1996-04-01), Cleveland et al.

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