Internal power supply circuit for use in a semiconductor device

Details Internal power supply circuit for use in a semiconductor device Internal power supply circuit for use in a semiconductor device

1994-03-17

1995-02-28

Skudy, R.

Electricity: power supply or regulation systems

In shunt with source or load

Using a three or more terminal semiconductive device

G05F 1613

Patent

active

053940776

ABSTRACT:
A boosting circuit generates an internal high voltage of a level higher than that of an internal voltage which is used in a semiconductor memory device. The boosting circuit has an output end connected to a capacitor having a large capacitance, and this capacitor is charged to an internal high voltage. The output end of the boosting circuit is connected to a drain of an N-channel transistor. This transistor has a gate which is supplied with a voltage V.sub.G higher than the internal voltage by a difference equivalent to a threshold voltage of the transistor. The internal voltage is outputted from a source of the transistor. When a skew occurs and the internal voltage is lowered while an address signal is changed, the internal high voltage charged in the capacitor is discharged through the transistor and the internal voltage is thus stabilized.

REFERENCES:
patent: 4961220 (1990-10-01), Tentler et al.
patent: 5233566 (1993-08-01), Imamiya et al.
patent: 5235520 (1993-08-01), Yokouchi
patent: 5253201 (1993-10-01), Atsumi et al.

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