Internal interleaving type semiconductor memory device

Static information storage and retrieval – Read/write circuit – Serial read/write

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365182, 365 95, 365191, 365239, G11C 1140, G11C 1300

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active

048624209

ABSTRACT:
A semiconductor memory device determines the level of a select control signal, according to the level of drive signals for two systems as generated in the preceding access cycle, and the level of the least significant bit of an address to fetch data in a desired serial access cycle. In accordance with this select signal, a select circuit selects one of the drive signals as generated by drive signal generating circuits, and supplies the selected signal to two data selecting/fetching systems. The function of this select circuit allows one of the two data selecting/fetching systems to first start the data access operation.

REFERENCES:
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patent: 4672587 (1987-06-01), Geiger
patent: 4685088 (1987-08-01), Iannucci
Ishimoto et al., "A 256K Dual Port Memory," IEEE International Solid-State Circuits Conference, Digest of Technical Papers, WAM 3.1, pp. 38-39, Feb. 1985.

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