Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-02-15
1998-05-12
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257399, 257400, 257409, 257493, 257494, 257495, H01L 2362, H01L 2976, H01L 2994
Patent
active
057510423
ABSTRACT:
An internal electrostatic discharge (ESD) protection circuit for semiconductor devices defines a structure for protecting adjacent n-channel devices. The first n-channel device includes a pair of n+ regions defining source and drain regions wherein the drain region is connected to a positive power supply terminal (V.sub.DD). The second, adjacent, n-channel device also includes a pair of n+ regions forming source and drain regions, respectively, wherein the source region of the second n-channel device is connected to a negative power supply terminal (V.sub.SS). The drain of the first n-channel device is laterally spaced, and isolated from the source of the second n-channel device by a thick field oxide region. The novel structure includes forming an N-conductivity type well that substantially overlaps the drain n+ region of the first n-channel device and extends toward the n+ region that forms the source of the second n-channel device. The N-well is doped to a lower density than the n+ regions, and further, is formed into the substrate to a depth that is substantially larger than the depth of the n+ regions. The N-well substantially increases the junction breakdown voltage of the device. Alternately, a p+ conductivity guard ring is disposed intermediate the n+ region forming the drain of the first n-channel device, and the n+ region forming the source of the second n-channel device to thereby reduce the current gain of a parasitic NPN bipolar transistor formed between the two n-channel devices. The decreased current gain prevents snapback triggered by an ESD event.
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Ngo Ngan V.
Winbond Electronics Corporation
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