Intermittent etching process

Details Intermittent etching process Intermittent etching process

1988-03-18

1988-12-13

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156653, 156656, 156657, 1566611, 1566591, 156664, H01L 21312

Patent

active

047909030

ABSTRACT:
An intermittent etching process for forming efficiently by reactive ion etching (RIE), a minute recess, such as a groove having an opening width as small as about 0.1 .mu.m, with a large aspect ratio in layers of metals, semiconductors, etc. The process comprises alternating RIE steps of brief duration e.g. 30 seconds with vacuumizing for evacuating gaseous reaction products produced in the RIE step from the etched recess. The process is particularly suitable for formation of a bridging portion of Nb, etc. constituting Josephson devices, by making use of three layered resist technique.

REFERENCES:
patent: 4333814 (1982-06-01), Kuyel
patent: 4417948 (1983-11-01), Mayne-Banton et al.
patent: 4587184 (1986-05-01), Schneider-Gmelch et al.
Tennant et al., "Twenty-Five nm . . . Trilevel C-Beam Resist" J. Vac. Sci Tech. 19(4), pp. 1304-1307 (1981).
Kruger et al., "Silicon Transfer Layer for Multilayer Resist Systems" J. Vac. Sci. Tech. 19(4), pp. 1320-1324 (1981).
Itakura, Hideaki, Japanese Patent Abstract 61-8925 Grp. No. E408, vol. 10, No. 150, May 31, 1986.

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