Intermediate semiconductor device structure including...

Details Intermediate semiconductor device structure including... Intermediate semiconductor device structure including...

2007-05-01

2007-05-01

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

11411575

ABSTRACT:
The present invention prevents cross-linking between multiple resists that are used in the fabrication of a semiconductor device. In order to prevent resists in close proximity or contact with one another from cross-linking, a non-reactive separation layer is disposed between the resists. The separation layer prevents incompatible components of the resists from reacting with one another. Forming the separation layer between the resists allows a resist located above the separation layer to be polymerized and patterned as desired without patterning another resist located below the separation layer. Methods of patterning multiple resists are also disclosed.

REFERENCES:
patent: 4589952 (1986-05-01), Behringer et al.
patent: 5472829 (1995-12-01), Ogawa
patent: 5614352 (1997-03-01), Rahman
patent: 5963841 (1999-10-01), Karlsson et al.
patent: 5965461 (1999-10-01), Yang et al.
patent: 6107172 (2000-08-01), Yang et al.
patent: 6121123 (2000-09-01), Lyons et al.
patent: 6242344 (2001-06-01), Koh et al.
patent: 6319821 (2001-11-01), Liu et al.
patent: 6365765 (2002-04-01), Baldwin et al.
patent: 6458705 (2002-10-01), Hung et al.
patent: 2002/0192595 (2002-12-01), Otoguro et al.
patent: 05-066568 (1993-03-01), None
Wolf, Stanley and Tauber, Richard N.,Silicon Processing for the VLSI Era, vol. 1, Lattice Press (1986), p. 564.

Affiliated with

Also associated with

Rating

Intermediate semiconductor device structure including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Intermediate semiconductor device structure including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Intermediate semiconductor device structure including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3804143