Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-28
2011-06-28
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S413000, C257SE21247, C257SE21409, C438S585000, C438S592000
Reexamination Certificate
active
07968954
ABSTRACT:
A method for reducing the effective thickness of a gate oxide using nitrogen implantation and anneal subsequent to dopant implantation and activation is provided. More particularly, the present invention provides a method for fabricating semiconductor devices, for example, transistors, which include a hardened gate oxide and which may be characterized by a relatively large nitrogen concentration at the polysilicon/gate oxide interface and a relatively small nitrogen concentration within the gate oxide and at the gate oxide/substrate interface. Additionally, the present invention provides a method for fabricating a semiconductor device having a metal gate strap (e.g., a metal silicide layer) disposed over the polysilicon layer thereof, which device includes a hardened gate oxide and which may be characterized by a relatively large nitrogen concentration at the silicide/polysilicon interface to substantially prevent cross-diffusion.
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Kuroi et al., Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for high Reliability and High Performance 0.25 μm Dual Gate CMOS, IEEE 1993.
Micro)n Technology, Inc.
Nguyen Khiem D
TraskBritt
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