Intermediate passivation and cleaning of compound semiconductor

Details Intermediate passivation and cleaning of compound semiconductor Intermediate passivation and cleaning of compound semiconductor

1985-04-02

1986-07-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 156662, 252 792, 2504922, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

045978255

ABSTRACT:
Crystalline compound semiconductors are passivated with a layer of the most volatile element thereof to prevent the formation of oxides that would interfere with further processing. A GaAs crystal is provided with a surface layer of arsenic. The arsenic layer is formed by exposure to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm.sup.2 while the GaAs immersed in a 1:1 HCl:H.sub.2 O solution for a period of 10-30 minutes. The intermediate processing passivated GaAs crystal may be stored and handled in air and the As layer is removed by low temperature baking.

REFERENCES:
patent: 4351706 (1982-09-01), Chappell et al.
J. Vac. Sci. Technol., 19(2), Jul./Aug. 1981, Protection of Molecular Beam Epitaxy Grown Al.sub.x Ga.sub.1-x As Epilayers During Ambient Transfer by S. P. Kowalczyk et al., pp. 255-256.
J. Vac. Sci. Technol., 21(2), Jul./Aug. 1982, Peroxide Etch Chemistry on <100> I No. 53 (Ga 0.47 As by D. E. Aspnes et al., pp. 413-416.

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