Intermediate layer material of three-layer resist system and met

Details Intermediate layer material of three-layer resist system and met Intermediate layer material of three-layer resist system and met

1985-06-06

1986-10-07

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

156643, 1566591, 1566611, 20419225, 528 39, 2041923, C23C 1500

Patent

active

046157824

ABSTRACT:
An intermediate layer material of a three-layer resist system for use in processing of a semiconductor substrate, comprising an organopolysiloxane. The organopolysiloxane is expressed by a general formula (R.sub.3 SiO.sub.1/2).sub.m.(R.sub.2 SiO).sub.n.(RSiO.sub.3/2).sub.p.(SiO.sub.2).sub.q {where R is independently a hydrocarbon group or an alkoxy group; and m, n, p and q represent composition ratios of respective units and satisfy m+n+p+q=1, 1.gtoreq.m>0, 1.gtoreq.n.gtoreq.0, 1.gtoreq.p.gtoreq.0, 1.gtoreq.q.gtoreq.0 (where p and q are not simultaneously 0), m/p.ltoreq.0.3 (where p.noteq.0), and/or m/q.ltoreq.1 (where q.noteq.0)}.

REFERENCES:
patent: 3873361 (1975-03-01), Franco et al.
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patent: 4024041 (1977-05-01), Hanazono et al.
patent: 4244799 (1981-01-01), Fraser et al.
patent: 4473435 (1984-09-01), Zafiropoulo et al.
Microelectronic Engineering, vol. 1, No. 3, Nov. 1983, pp. 197-208, Elsevier Science Publishers B.V. (North-Holland) Amsterdam, NL; C. Rosilio et al.: "Application of Polysiloxane Resists to Multilayer Resists Systems for High-Resolution Microlithography", p. 199, paragraphs 1,2; p. 205.

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