Intermediate layer material of three-layer resist system

Details Intermediate layer material of three-layer resist system Intermediate layer material of three-layer resist system

1986-07-14

1988-04-19

Swisher, Nancy A. B.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430273, 430312, 430523, 528 10, G03C 176

Patent

active

047389168

ABSTRACT:
An intermediate layer material of a three-layer resist system for use in processing of a semiconductor substrate, comprising an organopolysiloxane. The organopolysiloxane is expressed by a general formula (R.sub.3 SiO.sub.1/2).sub.m.(R.sub.2 SiO).sub.n.(RSiO.sub.3/2).sub.p.(SiO.sub.2).sub.q {where R is independently a hydrocarbon group or an alkoxy group; and m, n, p and q represent composition ratios of respective units and satisfy m+n+p+q=1, 1.gtoreq.m>0, 1.gtoreq.n.gtoreq.0, 1.gtoreq.p.gtoreq.0, 1.gtoreq.q.gtoreq.0 (where p and q are not simultaneously 0), m/p.ltoreq.0.3 (where p.noteq.0), and/or m/q.ltoreq.1 (where q.noteq.0)}.

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Rosilio et al., "Application of Polysiloxane Resist to Multi-Layer Resist Systems . . . ", Microelectronic Engineering, vol. 1 (3), Nov. 1983.
Microelectronic Engineering, vol. 1, No. 3, Nov. 1983, pp. 197-208, Elsevier Science Publishers B.V., (North-Holland), Amsterdam, NL; C. Rosilio et al.: "Application of Polysiloxane Resists to Multilayer Resists Systems for High-Resolution Microlithography", p. 199, paragraphs 1,2; p. 205.

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