Intermediate layer lithography

Details Intermediate layer lithography Intermediate layer lithography

1996-07-12

1999-11-02

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430313, 430318, 216 72, 438734, 438739, G03F 700

Patent

active

059767693

ABSTRACT:
An isotropic or partially isotropic etch shrinks lithographically patterned photoresist (211, 212) to yield reduced linewidth patterned photoresist (213, 214) with a buried antireflective coating also acting as an etchstop or a sacrificial layer. The reduced linewidth pattern (213, 214) provide an etch mask for subsequent anisotropic etching of underlying material such as polysilicon (206) or metal or insulator or ferroelectric.

REFERENCES:
patent: 4820611 (1989-04-01), Arnold et al.
patent: 5106786 (1992-04-01), Brady et al.
patent: 5525542 (1996-06-01), Maniar et al.

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