Interlevel dielectric with air gaps to lessen capacitive couplin

Details Interlevel dielectric with air gaps to lessen capacitive couplin Interlevel dielectric with air gaps to lessen capacitive couplin

1996-06-05

1998-09-29

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, H01L 21316

Patent

active

058145559

ABSTRACT:
A reduced permittivity interlevel dielectric in a semiconductor device arranged between two levels of interconnect. The dielectric comprises a first dielectric layer preferably from a silane source deposited on a first level interconnect to form air gaps at midpoints between adjacent first interconnect structures, a second dielectric containing air gap trenches at spaced intervals across the second dielectric, and a third dielectric formed upon said second dielectric. A second interconnect level is formed on the third dielectric.

REFERENCES:
patent: 4675074 (1987-06-01), Wada et al.
patent: 5310700 (1994-05-01), Lien et al.
patent: 5393709 (1995-02-01), Lur et al.

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