Interleaved stitch using segmented word lines

Details Interleaved stitch using segmented word lines Interleaved stitch using segmented word lines

1999-03-10

2000-10-31

Elms, Richard

Static information storage and retrieval

Interconnection arrangements

365 51, G11C 506

Patent

active

061412368

ABSTRACT:
A word line stitch mechanism to be used in high-density DRAMs is presented herein. The word line stitch mechanism of the present invention eliminates the problem caused by using the conventional word line stitch methods of the prior art in the high-density DRAMs. In the present invention, the word lines are segmented with an space between the two adjacent word line segments. Thereafter, the contacts between the word line segments and the associated metal layers are established such that the contact overlap areas are completely adjacent to all or a portion of the spaces between the word line segments of the adjacent word lines.

REFERENCES:
patent: 4827449 (1998-11-01), Inoue
patent: 5841688 (1998-11-01), Sukegawa et al.

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