Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-10-31
2006-10-31
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189120, C711S157000
Reexamination Certificate
active
07130211
ABSTRACT:
An interleave control device using a nonvolatile ferroelectric memory is disclosed. More specifically, a memory interleave structure using a nonvolatile ferroelectric register configured to individually control interleaves of banks is disclosed. In an embodiment of the present invention, interleaves of each bank can be individually controlled using a single nonvolatile ferroelectric memory chip, a multi-bank nonvolatile ferroelectric memory chip or a multi-bank interleave nonvolatile ferroelectric memory chip.
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Heller Ehrman LLP
Hynix / Semiconductor Inc.
Nguyen Van-Thu
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