Interlayer method utilizing CAD for process-induced proximity ef

Details Interlayer method utilizing CAD for process-induced proximity ef Interlayer method utilizing CAD for process-induced proximity ef

1997-11-17

1999-11-30

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, 3955002, G03F 900

Patent

active

059940093

ABSTRACT:
The present invention discloses a novel method for interlayer corrections for photolithographic patterns that are reproduced on a wafer surface capable of correcting not only the optically-induced proximity effect but also the process-induced proximity effect. In the method, a conventional optical proximity correction is first performed on a photomask, the corrected photomask is then used to produce a pattern on a wafer surface. The various critical dimensions bias values at a multiplicity of locations are then measured and fed back to the computer aided design data file for the photomask for producing patterns that are corrected for both optically-induced and process-induced proximity effect on a wafer surface.

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patent: 5667923 (1997-09-01), Kanata
patent: 5736281 (1998-04-01), Watson
patent: 5792581 (1998-08-01), Ohnuma

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