Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1986-02-24
1987-09-01
Niebling, John F.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419235, 20419237, 427 38, B05D 306, C23C 1400
Patent
active
046907467
ABSTRACT:
A method for producing a film over a topologically non-planar surface of a material which has a sputter etch rate which is higher in a direction parallel to the plane of the wafer than in a direction perpendicular to the plane of the wafer. Key steps in the process include first, depositing the material by plasma enhanced chemical vapor deposition while simultaneously sputter etching it. Then second, sputter etching the material. Using this two step process, a substantially conformal or sloped film is produced by repeating the steps consecutively until the desired thickness is obtained. The film can then be substantially planarized if desired, by an extended sputter etch to selectively remove material having a sloped surface rather than a flat surface, since the etch rate is higher parallel to the plane of the wafer than perpendicular to the wafer. If a thicker planar surface is desired, additional material can then be deposited by steps of simultaneous plasma chemical vapor deposition and sputter etch, or by consecutive steps of simultaneous plasma deposition and sputter etch followed by sputter etching.
REFERENCES:
patent: 3661747 (1972-05-01), Byrnes, Jr. et al.
patent: 3941672 (1976-03-01), Tanaka et al.
patent: 3945902 (1976-03-01), Hawryls et al.
patent: 3983022 (1976-09-01), Auyang et al.
patent: 4007103 (1977-02-01), Baker et al.
patent: 4339300 (1982-07-01), Noble
patent: 4468437 (1984-08-01), Patten et al.
patent: 4599135 (1986-07-01), Tsunekawa et al.
C. Y. Ting et al., "Study . . . SiO.sub.2 ", J. Vac. Sci. Technol., vol. 15, No. 2, May/Jun. 1972, pp. 1105-1112.
"Sidewall-Tapered Oxide by Plasma-Enhanced Chemical Vapor Deposition", by Gregory C. Smith and Andrew J. Purdes; J. Electrochem. Soc. Nov. 85, vol. 132, No. 11.
Dornseif E. Ronald
McInerney Edward J.
Zetterquist Norman E.
Genus Inc.
Nguyen Nam X.
Niebling John F.
Smith Joseph H.
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