Interlayer dielectric material in a semiconductor device...

Details Interlayer dielectric material in a semiconductor device... Interlayer dielectric material in a semiconductor device...

2008-07-01

2011-10-11

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S369000

Reexamination Certificate

active

08034726

ABSTRACT:
By forming a buffer material above differently stressed contact etch stop layers followed by the deposition of a further stress-inducing material, enhanced overall device performance may be accomplished, wherein an undesired influence of the additional stress-inducing layer may be reduced in device regions, for instance, by removing the additional material or by performing a relaxation implantation process. Furthermore, process uniformity during a patterning sequence for forming contact openings may be enhanced by partially removing the additional stress-inducing layer at an area at which a contact opening is to be formed.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 063 230.6-33 dated Sep. 21, 2009.

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