Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-07
2005-06-07
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C428S209000, C428S458000
Reexamination Certificate
active
06903006
ABSTRACT:
The interlayer dielectric film made of a three-dimensionally polymerized polymer is formed by polymerizing: first cross-linking molecules having three or more sets of functional groups in one molecule providing a three-dimensional structure; and a second cross-linking molecule having two sets of functional groups in one molecule providing a two-dimensional structure. In the three-dimensionally polymerized polymer, dispersed are a number of molecular level pores formed by the polymerization of the first and second cross-linking molecules.
REFERENCES:
patent: 5141817 (1992-08-01), Babich et al.
patent: 5955528 (1999-09-01), Sato et al.
patent: 5962113 (1999-10-01), Brown et al.
patent: 6162838 (2000-12-01), Kohl
patent: 6319854 (2001-11-01), Aoi
patent: 6380346 (2002-04-01), Han
patent: 11-214382 (1999-08-01), None
patent: 200-077399 (2000-03-01), None
patent: 2000-080272 (2000-03-01), None
Fourson George
Matsushita Electric - Industrial Co., Ltd.
Nixon & Peabody LLP
Studebaker Donald R.
Toledo Fernando L.
LandOfFree
Interlayer dielectric film, and method for forming the same... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Interlayer dielectric film, and method for forming the same..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interlayer dielectric film, and method for forming the same... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3507196