Interlayer connections for layered electronic devices

Details Interlayer connections for layered electronic devices Interlayer connections for layered electronic devices

2005-12-27

2005-12-27

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S624000, C438S668000, C438S637000, C438S667000, C257S773000, C257S775000, C257S765000, C257S750000, C257S758000, C257S760000

Reexamination Certificate

active

06979643

ABSTRACT:
In a method for forming interlayer connections, metal conducting paths in an overlaying layer and vias forming the deposit in one and the same operation. In an interlayer connection formed in this manner the vias are provided integral with connecting conducting paths in the overlaying layer.

REFERENCES:
patent: 5322816 (1994-06-01), Pinter
patent: 6127070 (2000-10-01), Yang et al.
patent: 6200855 (2001-03-01), Lee
patent: 6307267 (2001-10-01), Wada et al.
patent: 6342416 (2002-01-01), Kim et al.
patent: 6373136 (2002-04-01), Otsuka et al.
patent: 6417572 (2002-07-01), Chidambarrao et al.
patent: 6501113 (2002-12-01), Tsunemine et al.
patent: 6555450 (2003-04-01), Park et al.
patent: 6600225 (2003-07-01), Tanaka
patent: 05160445 (1993-06-01), None

Affiliated with

Also associated with

Rating

Interlayer connections for layered electronic devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interlayer connections for layered electronic devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interlayer connections for layered electronic devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3495055