Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-03-04
1998-06-16
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
287500, 438202, H01L 2912
Patent
active
057675511
ABSTRACT:
A process flow which can be used to fabricate a high frequency bipolar transistor 147, a power transistor 146, and non-power MOS devices on a single substrate while maintaining superior performance. The process flow forms an initial high-voltage tank 170 in substrate 150. A thin epitaxial layer 156 is formed on the substrate which overlies the initial high voltage tank and Diffusion Under Film, DUF, region 154. The high voltage tank is extended through the epitaxial layer and power transistor 146 is formed in the high voltage tank and high frequency bipolar transistor 147 is formed in the epitaxial layer using the DUF region as a deep collector. Other types of low voltage devices 139 and 140 and mid voltage devices 141-145 and 148-149 are formed unaffected by the presence of epitaxial layer 156. A single chip transmitter 400 and a single chip receiver 410 is fabricated with high frequency transistors and power devices. A single chip disk controller 460 is fabricated with high frequency transistors and power devices.
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Parker Ronald N.
Smayling Michael C.
Torreno, Jr. deceased Manuel L.
Donaldson Richard L.
Hardy David B.
Kesterson James C.
Laws Gerald E.
Texas Instruments Incorporated
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