Interferometric methods and apparatus for device fabrication

Details Interferometric methods and apparatus for device fabrication Interferometric methods and apparatus for device fabrication

1984-08-21

1987-07-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156653, 156655, 156657, 1566611, 156668, 156904, 156345, 156662, 20419234, 204298, 356382, 356445, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046800840

ABSTRACT:
The invention involves new etch monitoring and thickness measurement techniques which are more accurate than previous techniques. In accordance with the invention, the etch depth of a substrate region undergoing etching is monitored, or the thickness of the region is measured, by impinging the region with light and detecting the intensity of the reflected light. In contrast to the previous techniques, the incident light is chosen so that a substrate region underlying, and/or a patterned substrate region overlying the substrate region of interest is substantially opaque to the incident light, which precludes the formation of signals unrelated to etch depth or thickness.

REFERENCES:
patent: 4454001 (1984-06-01), Sternheim et al.
patent: 4482424 (1984-11-01), Katzir et al.

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