Interface circuit device for performing data sampling at...

Electrical computers and digital processing systems: support – Clock control of data processing system – component – or data...

Reexamination Certificate

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C713S500000, C710S305000, C711S167000

Reexamination Certificate

active

06715096

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an interface circuit such as a memory control device for controlling access to a memory device, and in particular to a bus interface circuit for rapidly taking in data in synchronization with a clock signal.
2. Description of the Background Art
FIG. 78
shows an example of a structure of a conventional data processing system. In
FIG. 78
, the conventional processing system includes a clock generator CG generating a system clock signal CLK, memory units MU
0
-MUn connected in parallel to a common bus CB and operating in synchronization with system clock signal CLK, a processor PC, such as a CPU (Central Processing Unit), for processing data stored in memory units MU
0
-MUn, and a memory controller MCR for transferring data requested of accessing by processor PC between memory units MU
0
-MUn and processor PC. Memory controller MCR operates in synchronization with system clock signal CLK as well.
In such processing system, for achieving fast data processing, a system clock rate has been increased, and a fast bus interface has been defined for fast data transfer via the common bus CB between memory controller MCR and memory units MU
0
-MUm. As typical examples of such a fast interface, there are an interface of DDR (Double Data Rate) specification that data are transferred in synchronization with both the rising and falling edges of system clock signal CLK, and an interface of Rambus specification that the clock signal and data are transferred in the same direction. By utilizing such a fast interface, the efficiency of data transfer on common bus CB is improved, and a waiting time of processor PC is reduced so that the system performance is improved.
FIG. 79
shows a relationship in timing between the data and the system clock signal in the DDR mode. In the DDR mode, the data is sampled in synchronization with the rising edge and the falling edge of clock signal CLK. Data DO sampled at the rising edge of clock signal CLK has a set-up time, tsu, and a hold time, th, with respect to clock signal CLK. Likewise, data D
1
sampled at the falling edge of clock signal CLK has set-up time, tsu, and hold time, th, with respect to the falling edge of clock signal CLK. The “sampling” means the timing at which memory controller MCR takes in the data, or the operation of taking the data into the memory unit.
Usually, data read from memory units MU
0
-MUn is transferred in synchronization with clock signal CLK. As clock signal CLK becomes faster and a cycle time T thereof becomes shorter, the set-up time, tsu, and hold time, th, of data D also become shorter. When clock signal CLK has a duty ratio of 50, a sum of set-up time, tsu, and hold time, th, can take the value of up to T/2. For example, if clock signal CLK has a frequency of 100 MHz, clock signal CLK has a period T of 10 ns (nano seconds) so that the set-up time, tsu, and hold time, th, can take the values of up to 5 ns. However, these specification values are of the order of pico-seconds. For ensuring such small specification values of the short set-up time and hold time, it is necessary to determine whether the specification values are accurately satisfied or not, and an expensive tester is required for such determination, resulting in increased cost of the memory unit.
According to the interface of the Rambus specification, the width and the data transfer rate of the data bus are fixedly determined. Therefore, a system designer cannot freely determine the transfer rate and the data bus width so that flexibility in design is considerably low.
Where memory controller MCR and memory units MU
0
-MUn as shown in
FIG. 78
are assembled on-board, the impedance of common bus CB (data bus) changes in accordance with the number of on-board memory units, and may also change due to variations in arrangement of on-board wiring lines. If such changes occur in impedance of the common bus (data bus), no timing margin is present in receiving the data by memory controller MCR even if the set-up time and the hold time are set to the values within the specification values, respectively. Due to such less timing margin, it may be impossible to take in accurate data in many cases. As clock signal CLK becomes faster, an eye pattern (effective data period) of data D becomes shorter.
Therefore, as shown in
FIG. 79
, failures occur in the set-up margin and the hold margin for data when variations in propagation delay occur among the memory units in data transfer. For matching the impedances of the on-board wiring lines with each other, if wiring lines of equal lengths may be arranged between the memory units and the memory controller, the board must have a multi-layered structure, and the wiring must be made in a three-dimensional structure so that the circuit-board becomes expensive.
FIG. 80
schematically illustrates a timing relationship of data transfer between memory controller MCR and memory unit MU in the memory system shown in FIG.
78
. In
FIG. 80
, each of memory controller MCR and memory unit MU includes a delayed locked loop (DLL) for generating an internal clock signal in accordance with the clock signal sent from clock generator CG. The clock signal generated by clock generator CG is transmitted as a clock signal Cy to memory controller MCR, and to memory unit MU as a clock signal Ct with a delay by a period Tskew due to a propagation delay on the clock signal line.
In memory unit MU, an output circuit outputs data Dt in accordance with the internal clock signal from DLL. Memory unit MU outputs data Dt from its output circuit with a delay of time Tt relative to the rising of the internal clock signal from DLL. Data Dt from memory unit MU reaches memory controller MCR after elapsing of a propagation delay time Tf. In memory controller MCR, a register takes in supplied data Dr in accordance with the internal clock signal generated from its internal DLL. When the register takes in data Dr that is sent from memory unit MU and arrives at memory controller MCR, the data is sampled into the register upon elapsing of set-up time Ts.
FIG. 81
is a signal waveform diagram representing operations of the system shown in FIG.
80
. The clock signal generated from clock generator CG has a cycle period of Tcycle. Memory unit MU outputs effective data in accordance with clock signal Ct with a delay of time Tt. Data Dt from memory unit MU arrives at memory controller MCR via the data bus after time Tf. Data Dr arriving at memory controller MCR is sampled into the register in accordance with clock signal Cr upon elapsing of set-up time Ts.
Therefore, the propagation time Tf changes in accordance with the wiring length between memory unit MU and memory controller MCR. Propagation delay Tskew of the clock signal changes in accordance with the distance between clock generator CG and memory unit MU as well. Therefore, even with the DLL for outputting data Dt from memory unit MU in synchronization with the clock signal, set-up time Ts differs for a different length of the path from the output circuit of memory unit MU to the register of memory controller MCR. Thus, the timing margin for taking in the data becomes inadequate, and the memory system capable of accurate data transfer cannot be achieved.
In the structure with the memory modules assembled on-board, the impedance of the data bus locally changes depending on the number of the on-board memory modules. Therefore, it is extremely difficult to make a propagation delay on a signal transfer path, which extends from the clock generator through the memory module, data line and input pad to the register (receiver) of the controller, equal for all the memory modules (memory chips). Accordingly, it is difficult to achieve the on-board memory system, in which fast and accurate data transfer can be achieved under fast operation environments.
As shown in
FIG. 80
, memory unit MU is configured to output the data, synchronized in phase with clock signal CLK as much as possible, by using DLL for reducing the delay with respect to the

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