Interface between titanium and aluminum-alloy in metal stack for

Details Interface between titanium and aluminum-alloy in metal stack for Interface between titanium and aluminum-alloy in metal stack for

1996-06-28

1998-05-05

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, 257763, 257765, 257767, 257915, 257771, H01L 2348, H01L 2940, H01L 2352, H01L 2912

Patent

active

057478791

ABSTRACT:
An improvement in a metal stack used for interconnecting structures in an integrated circuit. The improvement comprises the entrapping in a titanium layer of nitrogen at the interface where the titanium layer contacts a bulk conductor layer such as an aluminum-copper alloy layer. The entrapped nitrogen prevents the formation of any substantial amount of titanium aluminide thereby reducing current densities and also improving the electromigration properties of the stack. As currently preferred, the nitrogen is entrapped in approximately the first 30.ANG. of the titanium layer.

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Wendt et al.: Process Integration for Barrier Layers and Al-Alloys using a Sputtering cluster Tool, Microelectronic Engineering 19 (1992) 371-74 Elsevier no month.

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