Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-01
2009-02-03
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S307000, C257S308000
Reexamination Certificate
active
07485914
ABSTRACT:
An interdigitized capacitor comprising first and second electrodes. The first electrode comprises two combs symmetrical to a first mirror plane. The fingers of the combs extend toward the first mirror plane. The second electrode comprises two combs and a linear plate. The combs are symmetrical to a second mirror plane and the fingers thereof extend toward the second mirror plane. The linear plate is located at the second mirror plane and connected to one finger of the combs of the second electrode. The first and second mirror planes are orthogonal. The fingers of the combs of the first and second electrodes are interdigitized.
REFERENCES:
patent: 4491811 (1985-01-01), Niitsuma et al.
patent: 6230566 (2001-05-01), Lee et al.
patent: 6653681 (2003-11-01), Appel
patent: 6949811 (2005-09-01), Miyazawa
patent: 2005/0077581 (2005-04-01), Chang et al.
patent: 2007/0075397 (2007-04-01), Zhang
Hsu Chia-Jen
Huang Kai-Yi
Lu Len-Yi
Dang Phuc T
Muncy Geissler Olds & Lowe, PLLC
Nuvoton Technology Corporation
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