Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-02
2009-12-22
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000, C257SE27086
Reexamination Certificate
active
07635888
ABSTRACT:
The specification describes matched capacitor pairs that employ interconnect metal in an interdigitated form, and are made with an area efficient configuration. In addition, structural variations between capacitors in the capacitor pair are minimized to provide optimum matching. According to the invention, the capacitor pairs are interdigitated in a manner that ensures that the plates of each pair occupy common area on the substrate. Structural anomalies due to process conditions are compensated in that a given anomaly affects both capacitors in the same way. Two of the capacitor plates, one in each pair, are formed of comb structures, with the fingers of the combs interdigitated. The other plates are formed using one or more plates interleaved between the interdigitated plates.
REFERENCES:
patent: 5126280 (1992-06-01), Chan et al.
patent: 5192703 (1993-03-01), Lee et al.
patent: 2002/0076894 (2002-06-01), Hori et al.
patent: 2003/0089941 (2003-05-01), Baker et al.
patent: 2003/0113967 (2003-06-01), Allman et al.
patent: 2004/0046230 (2004-03-01), Bernstein et al.
patent: 2004/0219757 (2004-11-01), Olewine et al.
Harris Edward B.
He Canzhong
Leung Che Choi
McNeill Bruce W.
Agere Systems Inc.
Tran Thien F
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