Interconnects with interlocks

Details Interconnects with interlocks Interconnects with interlocks

2007-05-15

2007-05-15

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S678000

Reexamination Certificate

active

10902446

ABSTRACT:
Embodiments include interconnect of electrically conductive material with a contact surface, and a dielectric layer overlying the contact surface with a trench and via in the dielectric layer, the via extending to the contact surface. An interlock material is in the via with an interlock opening extending through the interlock material and into the interconnect. A layer of electroless material is on the base of the trench and the surfaces of the via, interlock material, and interlock opening. An subsequent interconnect is formed on the electroless material, in the trench, via, and interlock openings. The structure can be repeated to form a stack or column of interconnects that resist delamination.

REFERENCES:
patent: 5874358 (1999-02-01), Myers et al.
patent: 6492262 (2002-12-01), Uzoh
patent: 6642081 (2003-11-01), Patti
patent: 6946737 (2005-09-01), Sir et al.

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