Interconnects with improved TDDB

Details Interconnects with improved TDDB Interconnects with improved TDDB

2008-09-04

2011-11-08

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C257SE21584

Reexamination Certificate

active

08053361

ABSTRACT:
A method for forming a semiconductor device is presented. A substrate prepared with a dielectric layer formed thereon is provided. A first upper etch stop layer is formed on the dielectric layer. The first upper etch stop layer includes a first dielectric material. The dielectric layer and first upper etch stop layer are patterned to form an interconnect opening. The interconnect opening is filled with a conductive material to form an interconnect. The interconnect and first upper etch stop layer have coplanar top surfaces. A second upper etch stop layer is formed over the coplanar top surfaces. The second upper etch stop layer includes a second material having sufficient adhesion with the first material to reduce diffusion of the conductive material.

REFERENCES:
patent: 6146995 (2000-11-01), Ho
patent: 7009280 (2006-03-01), Angyal et al.
patent: 7867917 (2011-01-01), Hohage et al.
patent: 2004/0187304 (2004-09-01), Chen et al.
patent: 2006/0089007 (2006-04-01), Huang
patent: 2007/0023870 (2007-02-01), Dubois et al.
patent: 2009/0039518 (2009-02-01), Feurprier

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