Interconnects using metal spacers

Details Interconnects using metal spacers Interconnects using metal spacers

1997-04-08

1998-09-15

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257347, 257763, 257765, 257903, H01L 2348, H01L 2352, H01L 2940, H01L 2701

Patent

active

058083642

ABSTRACT:
The preferred embodiment of the present invention provides increased conductivity between interlevel interconnection lines. The preferred embodiment uses sidewall spacers on the sides of the interconnection lines to increase the contact area between interconnection lines and interconnect studs. This increase in area improves connection resistance and allows further device scaling without unacceptable decreases in the conductivity of the connection, and without adding significant expense in the fabrication process.

REFERENCES:
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5061647 (1991-10-01), Roth et al.
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5170243 (1992-12-01), Dhong et al.
patent: 5207868 (1993-05-01), Shinohara
patent: 5217570 (1993-06-01), Kadomura
patent: 5221430 (1993-06-01), Kadomura et al.
patent: 5277757 (1994-01-01), Sato
patent: 5291053 (1994-03-01), Pfiester et al.
patent: 5360510 (1994-11-01), Kadomura
patent: 5484747 (1996-01-01), Chien
patent: 5514622 (1996-05-01), Bornstein et al.
patent: 5633781 (1997-05-01), Saenger et al.
patent: 5670806 (1997-09-01), Jun

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