Interconnects having sealing structures to enable selective...

Details Interconnects having sealing structures to enable selective... Interconnects having sealing structures to enable selective...

2008-07-22

2008-07-22

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S688000, C257SE23161

Reexamination Certificate

active

07402519

ABSTRACT:
Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

REFERENCES:
patent: 6597068 (2003-07-01), Petrarca et al.
patent: 2002/0042193 (2002-04-01), Noguchi et al.
Mauro J. Kobrinsky et al., U.S. Appl. No. 11/081,187, filed Mar. 16, 2005, “Method of Forming Self-Passivation Interconnects and Resulting Devices”, 38 pages.

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