Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-15
2007-05-15
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S672000, C438S674000, C438S675000, C438S976000, C257SE23141, C257SE21575, C257SE21590, C257SE21579
Reexamination Certificate
active
10896014
ABSTRACT:
The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.
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Fukunaga Akira
Fukunaga Yukio
Takagi Daisuke
Tashiro Akihiko
Wang Xinming
Ebara Corporation
Estrada Michelle
Wenderoth , Lind & Ponack, L.L.P.
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