Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-02
2006-05-02
Potter, Roy (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S631000
Reexamination Certificate
active
07037835
ABSTRACT:
Provided are an interconnection of a semiconductor device which includes a capping layer and a method for forming the interconnection. The interconnection of the semiconductor device is a copper damascene interconnection where the capping layer is formed as a dual layer of a silicon nitride layer and silicon carbide layer on a copper layer processed by chemical mechanical polishing (CMP). Therefore, it is possible to maintain a high etching selectivity and a low dielectric constant of the silicon carbide layer while providing superior leakage suppression.
REFERENCES:
patent: 6465888 (2002-10-01), Chooi et al.
patent: 6756321 (2004-06-01), Ko et al.
Lee Kyoung-woo
Lee Soo-geun
Park Ki-chul
Song Won-sang
Mills & Onello LLP
Potter Roy
Samsung Elecrtonics Co., Ltd.
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