Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-05-31
2011-05-31
Whitmore, Stacy A (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C716S119000, C257S773000
Reexamination Certificate
active
07951703
ABSTRACT:
An interconnect connection structure having first and second interconnects and multiple connection elements that electrically connect the first interconnect to the second interconnect is described. The multiple connection elements are formed laterally in a lateral region of the first and second interconnects relative to an overlay orientation of the interconnects. A central region may be free of connection elements so that electro-migration properties of the connection structure are improved and the current-carrying capacity is increased.
REFERENCES:
patent: 5955788 (1999-09-01), Iwasa
patent: 5963831 (1999-10-01), Fu
patent: 6548902 (2003-04-01), Suzuki et al.
patent: 2002/0127846 (2002-09-01), Burrell et al.
Goller Klaus
Wenzel Roland
Brinks Hofer Gilson & Lione
Infineon - Technologies AG
Whitmore Stacy A
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