Interconnections for integrated circuits

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S637000, C716S119000, C257S773000

Reexamination Certificate

active

07951703

ABSTRACT:
An interconnect connection structure having first and second interconnects and multiple connection elements that electrically connect the first interconnect to the second interconnect is described. The multiple connection elements are formed laterally in a lateral region of the first and second interconnects relative to an overlay orientation of the interconnects. A central region may be free of connection elements so that electro-migration properties of the connection structure are improved and the current-carrying capacity is increased.

REFERENCES:
patent: 5955788 (1999-09-01), Iwasa
patent: 5963831 (1999-10-01), Fu
patent: 6548902 (2003-04-01), Suzuki et al.
patent: 2002/0127846 (2002-09-01), Burrell et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Interconnections for integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interconnections for integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnections for integrated circuits will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2685871

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.