Interconnection structure

Details Interconnection structure Interconnection structure

2007-08-28

2007-08-28

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21170, C257SE21582, C257S751000, C257S773000, C257S774000, C257S758000, C257S680000

Reexamination Certificate

active

11132223

ABSTRACT:
In a metal film production apparatus, a copper plate member is etched with a Cl2gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2gas, and the Cl* is supplied into the chamber to withdraw a Cl2gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

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