Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-12-11
2007-12-11
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S737000
Reexamination Certificate
active
11195361
ABSTRACT:
An interconnection structure includes an integrated circuit (IC) chip having internal circuitry and a terminal to electrically connect the internal circuitry to an external circuit, a passivation layer disposed on a top surface of the IC chip, the passivation layer configured to protect the internal circuitry and to expose the terminal, an input/output (I/O) pad, where the I/O pad includes a first portion in contact with the terminal and a second portion that extends over the passivation layer, and an electroless plating layer disposed on the I/O pad.
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Jeong Se-Young
Kim Soon-Bum
Lee In-Young
Sim Sung-Min
Song Young-Hee
Ho Anthony
Jackson Jerome
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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