Interconnection structure of a semiconductor device

Details Interconnection structure of a semiconductor device Interconnection structure of a semiconductor device

1994-07-13

1995-08-15

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257763, 257764, 257758, 257759, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

054422388

ABSTRACT:
A first aluminum interconnection layer includes an aluminum alloy layer 12 and an upper metal layer 13 containing refractory metal. A second aluminum layer 15 is in contact with a surface of upper metal layer 13 through a through-hole 19. A thickness t2 of a contact portion 132 of upper metal layer 13 is smaller than a thickness t1 of a non-contact portion 131. In an interconnection structure for a semiconductor integrated circuit device, the increase in electric resistance by the through-hole is suppressed, and also effects achieved by layer 13 containing refractory metal forming the most upper portion of first aluminum interconnection layer 1A are maintained.

REFERENCES:
patent: 3562604 (1971-02-01), Van Laer et al.
patent: 4556897 (1985-12-01), Yorikane et al.
patent: 4900695 (1990-02-01), Takahashi et al.

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