Interconnection structure in semiconductor device and the method

Details Interconnection structure in semiconductor device and the method Interconnection structure in semiconductor device and the method

1992-11-17

1994-06-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 21, 437189, 437193, H01L 2144

Patent

active

053209800

ABSTRACT:
An interconnection structure of a semiconductor device for electrically connecting a thin conductive layer and a metallization and the fabrication method thereof are disclosed. The interconnection structure includes a semiconductor substrate, an insulating layer coated on the substrate, a thick conductive layer formed on a certain portion of the insulating layer, a first interlaid insulating layer covering the thick conductive layer, a first contact hole formed within the first interlaid insulating layer on the thick conductive layer, a thin conductive layer consisting of vertical structure formed in the first contact hole and horizontal structure formed on the first interlaid insulating layer, a second interlaid insulating layer covering the thin conductive layer, a second contact hole formed within said first and second interlaid insulating layers and crossing the first contact hole, and a metallization filling the second contact hole and formed on the second interlaid insulating layer. Thus, the contact area between the metallization and thin conductive layer is increased, thereby allowing a reliable ohmic contact while directly connecting the thin conductive layer and metallization.

REFERENCES:
patent: 5084416 (1992-01-01), Ozaki et al.
patent: 5144579 (1992-09-01), Okabe et al.

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